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APTGT300TL60G
Three level inverter Trench + Field Stop IGBT Power Module
VBUS
VCES = 600V IC = 300A @ Tc = 80C
G1 Q1 E1
CR1
Application * Solar converter * Uninterruptible Power Supplies Features * Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile * RoHS Compliant
CR5 G2 Q2 NEUTRAL E2
CR2
OUT
CR6
G3 Q3 E3
CR3
G4 Q4 E4
CR4
0/VBUS
VBUS G1 E1
0/VBUS G4 NEUTRAL E4
E2 G2 OUT
E3 G3
Q1 to Q4 Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C Tj = 150C Max ratings 600 400 300 600 20 935 600A @ 550V Unit V A V W
March, 2009 1-7 APTGT300TL60G - Rev1
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGT300TL60G
All ratings @ Tj = 25C unless otherwise specified Q1 to Q4 Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25C VGE =15V IC = 300A Tj = 150C VGE = VCE , IC = 5 mA VGE = 20V, VCE = 0V Min Typ 1.5 1.7 5.8 Max 350 1.9 6.5 800 Unit A V V nA
5.0
Q1 to Q4 Dynamic Characteristics
Symbol Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc RthJC Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Short Circuit data Junction to Case Thermal Resistance Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE=15V, IC=300A VCE=300V Inductive Switching (25C) VGE = 15V VBus = 300V IC = 300A RG = 2.2 Inductive Switching (150C) VGE = 15V VBus = 300V IC = 300A RG = 2.2 Tj = 25C Tj = 150C Tj = 25C Tj = 150C VGE 15V ; VBus = 360V tp 6s ; Tj = 150C VGE = 15V VBus = 300V IC = 300A RG = 2.2 Min Typ 18.4 1.16 0.54 3.2 115 45 225 55 130 50 300 70 1.7 3 8.2 10.6 1500 0.16 Max Unit nF C
ns
ns
mJ mJ A C/W
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2-7
APTGT300TL60G - Rev1
March, 2009
APTGT300TL60G
CR1 to CR4 diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Err RthJC Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy Junction to Case Thermal Resistance IF = 200A VR = 300V IF = 200A VGE = 0V Test Conditions VR=600V Tj = 25C Tj = 150C Tc = 80C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Min 600 Typ Max 150 400 200 1.6 1.5 125 220 9.4 19.8 2.2 4.8 0.39 2 Unit V A A V ns C mJ C/W
di/dt =2800A/s
CR5 & CR6 diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Err RthJC Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy Junction to Case Thermal Resistance IF = 300A VR = 300V IF = 300A VGE = 0V Test Conditions VR=600V Tj = 25C Tj = 150C Tc = 80C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Min 600 Typ Max 150 400 300 1.6 1.5 130 225 13.7 29 3.2 7 0.29 2 Unit V A A V ns C mJ C/W
di/dt =4000A/s
Thermal and package characteristics
Symbol VISOL TJ TSTG TC Torque Wt Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5
Min 2500 -40 -40 -40 3 2
Typ
Max 175 125 100 5 3.5 280
Unit V C N.m
March, 2009 3-7 APTGT300TL60G - Rev1
g
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APTGT300TL60G
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
Q1 to Q4 Typical performance curve
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 80
VCE=300V D=50% R G=2.2 T J=1 50C T c =85C
60
40
Hard switching
0 0 100 200 IC (A) 300 400
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4-7
APTGT300TL60G - Rev1
March, 2009
20
APTGT300TL60G
Output Characteristics (VGE=15V) Output Characteristics 500 400
TJ=125C VGE=13V TJ = 150C VGE=19V
500
TJ=25C
400
IC (A) IC (A)
300 200 100
TJ=25C
TJ=150C
300 200
VGE=15V
VGE=9V
100 0
0 0 0.5 1 1.5 2 2.5
VCE (V) Transfert Characteristics
TJ=25C
0
0.5
1
1.5 2 VCE (V)
2.5
3
3.5
Energy losses vs Collector Current 16 12 E (mJ) 8 4
VCE = 300V VGE = 15V RG = 2.2 TJ = 150C Eoff
500 400 300 200 100 0 5
IC (A)
TJ=125C TJ=150C TJ=25C
Eon
0 6 7 8 VGE (V) 9 10 11 0 100 200 IC (A) Reverse Bias Safe Operating Area 700
Eoff Eoff
300
400
500
Switching Energy Losses vs Gate Resistance 20 16 E (mJ) 12 8 4
Eon VCE = 300V VGE =15V IC = 300A TJ = 150C
600 500 IC (A) 400 300 200 100 0 15 0
VGE=15V TJ=150C RG=2.2
0 0 2.5 5 7.5 10 12.5 Gate Resistance (ohms)
100
200
300 400 VCE (V)
500
600
700
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.18 Thermal Impedance (C/W) 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0.7 0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.9
Rectangular Pulse Duration in Seconds
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5-7
APTGT300TL60G - Rev1
0.05 0 0.00001
March, 2009
APTGT300TL60G
CR1 to CR4 Typical performance curve
Forward Characteristic of diode 400
300 IF (A)
200
TJ=150C
100
TJ=25C
0 0 0.4 0.8 1.2 1.6 VF (V) 2 2.4
Switching Energy Losses vs Gate Resistance 5 4 Err (mJ) 3 2 1 0 0 2.5 5 7.5 10 12.5 Gate Resistance (ohms) 15 0 0 8
VCE = 300V IC = 200A TJ = 150C
Energy losses vs Collector Current
VCE = 300V RG = 1.8 TJ = 150C
6 Err (mJ) 4 2
100
200 IF (A)
300
400
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.4 Thermal Impedance (C/W) 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0.9 0.7 0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10
March, 2009 6-7 APTGT300TL60G - Rev1
0.05 0 0.00001
Rectangular Pulse Duration in Seconds
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APTGT300TL60G
CR5 & CR6 Typical performance curve
Forward Characteristic of diode 500 400 300 200 100 0 0 0.4 0.8 1.2 1.6 VF (V) 2 2.4
TJ=150C TJ=25C
IF (A)
Switching Energy Losses vs Gate Resistance 8
VCE = 300V IF = 300A TJ = 150C
Energy losses vs Collector Current 10 8 Err (mJ) 6 4 2 0
VCE = 300V RG = 2.2 TJ = 150C
6 Err (mJ)
4
2
0 0 2.5 5 7.5 10 12.5 Gate Resistance (ohms) 15
0
100
200 IF (A)
300
400
500
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.3 Thermal Impedance (C/W) 0.25 0.7 0.2 0.15 0.1 0.05 0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10
March, 2009 7-7 APTGT300TL60G - Rev1
0.9
0.05 0 0.00001
Rectangular Pulse Duration in Seconds
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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